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| SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 - MARCH 2001 BCX5616 C COMPLEMENTARY TYPE - BCX5316 PARTMARKING DETAIL - BL C B SOT89 E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 100 80 5 2 1 1 -65 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(on) h FE 25 100 25 150 15 MIN. 100 80 5 0.1 20 20 0.5 1.0 TYP. MAX. UNIT CONDITIONS. V V V IC =100A IC =10mA I E =10A V CB =30V V CB =30V, T amb =150C V EB =4V I C =500mA, I B =50mA* I C =500mA, V CE =2V* I C =5mA, V CE =2V* I C =150mA, V CE =2V* I C =500mA, V CE =2V* MHz pF I C =50mA, V CE =10V, f=100MHz V CB =10V, f=1MHz A A nA V V 250 fT C obo *Measured under pulsed conditions. TBA |
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